Title :
Numerical analysis of concentration quenching model of Er3+-doped phosphate fiber amplifier
Author :
Jiang, Chun ; Hu, Weisheng ; Zeng, Qingji
Author_Institution :
State Key Lab. of Adv. Opt. Commun. Syst. & Networks, Shanghai Jiaotong Univ., China
Abstract :
Based on the homogenous model and inhomogeneous model of concentration quenching of erbium-doped fiber amplifier with high doping concentration, the rate equation and power evolution equation of erbium-doped phosphate fiber are solved numerically and analyzed. The dependence of the calculated gain and noise figure on pump power is compared with experimental data, and the results indicate that the combined model of the two models is in good agreement with experimental data. The relative number of clusters in erbium-doped phosphate fibers is estimated from the numerical analysis, and the optimal doping concentration and length of erbium-doped phosphate fibers are proposed in this paper. By numerical analysis, the results show that with 200-mW/980-nm pump power, an erbium-doped phosphate fiber amplifier with a doping concentration of 4.0×1026 ion/m3 and length of 10 cm may reach 27.0-dB gain.
Keywords :
erbium; laser theory; optical fibre amplifiers; optical pumping; radiation quenching; 10 cm; 200 mW; 27.0 dB; 980 nm; Er3+-doped phosphate fiber amplifier; P2O5:Er; clusters; concentration quenching; concentration quenching model; doping concentration; erbium-doped fiber amplifier; erbium-doped phosphate fiber; erbium-doped phosphate fibers; high doping concentration; homogenous model; inhomogeneous model; noise figure; numerical analysis; optimal doping concentration; power evolution equation; pump power; rate equation; Doping; Erbium; Erbium-doped fiber amplifier; Glass; Numerical analysis; Optical fiber amplifiers; Optical fibers; Optical waveguides; Performance gain; Semiconductor process modeling;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.817667
