Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

Author

Yu, Haijiang ; McCarthy, L. ; Rajan, S. ; Keller, S. ; DenBaars, S. ; Speck, J. ; Mishra, U.

Author_Institution

Santa Barbara Group, Univ. of California, Santa Barbara, CA, USA

Volume

26

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

283

Lastpage

285

Abstract

In this letter, the incorporation of Si implantation into AlGaN-GaN high-electron mobility transistor (HEMT) processing has been demonstrated. An ultrahigh-temperature (1500°C) rapid thermal annealing technique was developed for the activation of Si dopants implanted in the source and drain. In comparison to control devices processed by conventional fabrication, the implanted device with nonalloyed ohmic contact showed comparable device performance with a contact resistance of 0.4 Ω·mm, I_max of 730 mA/mm, f_t/f_max of 26/62 GHz, and a power of 3.4 W/mm on sapphire. These early results demonstrate the feasibility of implantation incorporation into GaN-based device processing as well as the potential to increase yield, reproducibility, and reliability in AlGaN-GaN HEMTs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; high-temperature techniques; ion implantation; ohmic contacts; rapid thermal annealing; wide band gap semiconductors; 1500 C; AlGaN-GaN; high-electron mobility transistor; ion implantation; nonalloyed ohmic contacts; rapid thermal annealing; sapphire; ultrahigh-temperature; Aluminum gallium nitride; Contact resistance; Fabrication; HEMTs; MODFETs; Ohmic contacts; Potential well; Process control; Rapid thermal annealing; Rapid thermal processing; GaN; high-electron mobility transistor (HEMT); ion implantation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.846583

Filename

1425683