Electrical properties of amorphous high-κ HfTaTiO gate dielectric with dielectric constants of 40-60

High-quality Hf-based gate dielectrics with dielectric constants of 40-60 have been demonstrated. Laminated stacks of Hf, Ta, and Ti with a thickness of ∼10 Å each was deposited on Si followed by rapid thermal anneal. X-ray diffraction analysis showed that the crystallization temperature of the laminated dielectric stack is increased up to 900°C. The excellent electrical properties of HfTaTiO dielectrics with TaN electrode have been demonstrated, including low interface state density (D_it), leakage current, and trap density. The effect of binary and ternary laminated metals on the enhancement of dielectric constant and electrical properties has been studied.