• DocumentCode
    793472
  • Title

    AlGaAs/GaAs heterojunction bipolar transistor decision circuit

  • Author

    Swartz, R.G. ; Lunardi, L.M. ; Malik, R.J. ; Feuer, Mark D. ; Walker, Joel F. ; Fullowan, T.R.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    An AlGaAs/GaAs heterojunction bipolar transistor (HBT) decision circuit has been designed and characterised for optical communications, using 3.5 mu m emitter width transistors with cutoff frequency of 27 GHz. The maximum bitrate for a BER of 10-9 was 4.2 Gbit/s. At 2.0 Gbit/s, the clock phase margin was 240 degrees .
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 2 to 4.2 Gbit/s; 27 GHz; 3.5 micron; AlGaAs-GaAs; BER; ECL latches; HBT; III-V semiconductors; clock phase margin; cutoff frequency; decision circuit; heterojunction bipolar transistor; logic IC; maximum bitrate; optical communications;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890087
  • Filename
    14257
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=793472