A correlation study between different types of CDM testers and “real” manufacturing in-line leakage failures

Author

Chaine, Michael D. ; Liong, Chen Teck ; San, Ho Fock

Author_Institution

Texas Instrum. Inc., Houston, TX, USA

Volume

18

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

295

Lastpage

302

Abstract

Charged device model (CDM) tests generated ESD failures that correlated closely to assembly/test manufacturing in-line leakage failures. Both the “field induced noncontact” and “socketed” CDM testers correctly identified the weakest pins in a 0.8-μm CMOS technology device. A correlation of the initial fail voltage was found between the different field-induced CDM testers and the eight weakest pins. Similar CDM-tests found a weak pin to pin correlation between the two different socketed CDM testers

Keywords

CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; production testing; 0.8 micron; CDM testers; CMOS technology; ESD failures; charged device model; field induced noncontact testers; field-induced CDM testers; initial fail voltage; manufacturing in-line leakage failures; pin to pin correlation; socketed testers; Assembly; CMOS technology; Circuits; Electrostatic discharge; Manufacturing industries; Pins; Production facilities; Semiconductor device modeling; Testing; Virtual manufacturing;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.390306

Filename

390306