DocumentCode :
793748
Title :
Future navy application of wide bandgap power semiconductor devices
Author :
Ericsen, Terry
Author_Institution :
Office of Naval Res., Arlington, VA, USA
Volume :
90
Issue :
6
fYear :
2002
fDate :
6/1/2002 12:00:00 AM
Firstpage :
1077
Lastpage :
1082
Abstract :
An assessment of future U.S. Navy electrical power requirements is presented to identify wide bandgap power device application opportunities, issues, and challenges. An emphasis is placed on blocking voltage and the potential of wide bandgap power semiconductor devices to enable higher voltage machines that can meet the U.S. Navy´s future electrical power challenges. Estimates of the blocking voltage and power requirements are made for various power systems envisioned for future shipboard application. Blocking voltage estimates are made using a simplified stress level analysis to illustrate the basic concepts underlying power semiconductor device application in U.S. Navy shipboard systems.
Keywords :
naval engineering; power semiconductor devices; wide band gap semiconductors; U.S. Navy; blocking voltage; electrical power requirements; higher voltage machines; power semiconductor devices; shipboard application; shipboard systems; stress level analysis; wide bandgap semiconductor devices; Capacitors; Inductors; Marine vehicles; Photonic band gap; Power semiconductor devices; Semiconductor materials; Silicon carbide; Stress; Transformers; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2002.1021572
Filename :
1021572
Link To Document :
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