• DocumentCode
    79395
  • Title

    Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate

  • Author

    Dong-Il Moon ; Sung-Jin Choi ; Duarte, Juan Pablo ; Yang-Kyu Choi

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    60
  • Issue
    4
  • fYear
    2013
  • fDate
    Apr-13
  • Firstpage
    1355
  • Lastpage
    1360
  • Abstract
    A silicon nanowire (Si-NW) with a gate-all-around (GAA) structure is implemented on a bulk wafer for a junctionless (JL) field-effect transistor (FET). A suspended Si-NW from the bulk-Si is realized using a deep reactive ion etching (RIE) process. The RIE process is iteratively applied to make multiply stacked Si-NWs, which can increase the on-state current when amplified with the number of iterations or enable integration of 3-D stacked Flash memory. The fabricated JL FETs exhibit excellent electrostatic control with the aid of the GAA and junction-free structure. The influence on device characteristics according to the channel dimensions and additional doping at the source and drain extension are studied for various geometric structures of the Si-NW.
  • Keywords
    elemental semiconductors; field effect transistors; flash memories; iterative methods; nanowires; silicon; sputter etching; 3D stacked flash memory; GAA structure; JL FET; Si; bulk substrate; bulk wafer; channel dimensions; deep RIE process; deep reactive ion etching process; gate-all-around structure; iterations; junction-free structure; junctionless field-effect transistor; on-state current; silicon nanowire gate-all-around junctionless transistors; Doping; Etching; Field effect transistors; Logic gates; Silicon; Substrates; Bosch process; bulk MOSFET; corner effect; deep reactive ion etching (RIE); extension doping; gate-all-around (GAA); junctionless (JL) transistor; short-channel effects (SCEs); vertically stacked silicon nanowire (Si-NW);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2247763
  • Filename
    6473874