Magneto-impedance in sputtered amorphous films for micro magnetic sensor

Author

Uchiyama, T. ; Mohri, K. ; Panina, L.V. ; Furuno, K.

Author_Institution

Nagoya Univ., Japan

Volume

31

Issue

6

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

3182

Lastpage

3184

Abstract

The magneto-impedance (MI) effect in RF sputtered (CoFe)₈₀B₂₀ zero-magnetostrictive amorphous films are presented. The relation between annealing conditions and MI characteristics was investigated. Impedance Z monotonously decreased with increasing applied field Hex when a high frequency sinusoidal current was applied to the sample annealed in a rotational field. In case of the samples having transverse anisotropy, Z sharply increases with Hex for the region Hex<Hk (anisotropy field). MI ratio (Δ|Zl/lZ₀l/Oe) of 8%/Oe was obtained for the sample annealed in a dc field (or applying dc current) after annealing in the rotational field. The Colpitts oscillator type field sensor was constructed using the film element. A direction sensing utilizing the terrestrial field was carried out using the MI-colpitts sensor

Keywords

amorphous magnetic materials; annealing; boron alloys; cobalt alloys; iron alloys; magnetic anisotropy; magnetic sensors; magnetic thin film devices; magnetoresistive devices; microsensors; sputtered coatings; (CoFe)₈₀B₂₀; Colpitts oscillator; DC field; RF sputtered amorphous films; annealing; direction sensing; magneto-impedance; micro magnetic sensor; rotational field; transverse anisotropy; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Annealing; Impedance; Magnetic anisotropy; Magnetic films; Oscillators; Perpendicular magnetic anisotropy; Radio frequency;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.490321

Filename

490321