• DocumentCode
    79407
  • Title

    A \\mu -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

  • Author

    Berdan, Radu ; Serb, Alexander ; Khiat, Ali ; Regoutz, Anna ; Papavassiliou, Christos ; Prodromakis, Themis

  • Author_Institution
    Dept. of Electr. & Electron. Eng. Circuits & Syst. Group, Imperial Coll. London, London, UK
  • Volume
    62
  • Issue
    7
  • fYear
    2015
  • fDate
    Jul-15
  • Firstpage
    2190
  • Lastpage
    2196
  • Abstract
    Selectorless crossbar arrays of resistive randomaccess memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <;1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <;10% error. The platform´s limitations have been quantified using large-scale nonideal crossbar simulations.
  • Keywords
    circuit testing; electric resistance measurement; electronics packaging; memristors; resistive RAM; μ-controller-based system; calibration; cross-point analog resistance measurement; custom-made discrete resistive crossbar array; interfacing selectorless RRAM crossbar array; large-scale nonideal crossbar simulation; mCAT instrument; memristor; memristor characterization and testing instrument; resistance 1 kohm to 1 Mohm; resistive random access memory; solid-state RRAM array; Current measurement; Electrical resistance measurement; Measurement uncertainty; Memristors; Resistance; Voltage measurement; Crossbars; memristors; resistive random-access memory (RRAM); sneak paths; sneak paths.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2433676
  • Filename
    7113814