DocumentCode
79407
Title
A
-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays
Author
Berdan, Radu ; Serb, Alexander ; Khiat, Ali ; Regoutz, Anna ; Papavassiliou, Christos ; Prodromakis, Themis
Author_Institution
Dept. of Electr. & Electron. Eng. Circuits & Syst. Group, Imperial Coll. London, London, UK
Volume
62
Issue
7
fYear
2015
fDate
Jul-15
Firstpage
2190
Lastpage
2196
Abstract
Selectorless crossbar arrays of resistive randomaccess memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <;1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <;10% error. The platform´s limitations have been quantified using large-scale nonideal crossbar simulations.
Keywords
circuit testing; electric resistance measurement; electronics packaging; memristors; resistive RAM; μ-controller-based system; calibration; cross-point analog resistance measurement; custom-made discrete resistive crossbar array; interfacing selectorless RRAM crossbar array; large-scale nonideal crossbar simulation; mCAT instrument; memristor; memristor characterization and testing instrument; resistance 1 kohm to 1 Mohm; resistive random access memory; solid-state RRAM array; Current measurement; Electrical resistance measurement; Measurement uncertainty; Memristors; Resistance; Voltage measurement; Crossbars; memristors; resistive random-access memory (RRAM); sneak paths; sneak paths.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2433676
Filename
7113814
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