Radiation Effects on Junction Field Effect Transistors

Experimentally determined permanent and transient effects of radiation on the electrical characteristics of junction field effect transistors (JFET´s) are presented for JFET´s exposed to energetic neutron doses up to 1016 neutrons/cm2 (E > 10 Kev) and ionizing radiation up to 8×109 rad/sec. Results of extensive transient radiation experiments using the AFCRL Linac are presented for various combinations of channel doping, gate resistor values, gate voltages, drain voltages, gold doping and dose rates. Limited new experimental data is presented on neutron damage. Existing neutron degradation data on hardened JFET´s is summarized. The JFET neutron degradation theory is summarized and refined.