Technique for Estimating Primary Photocurrents in Silicon Bipolar Transistors

It is often difficult to radiation-test the transistors of interest in the initial phases of a program involving radiation-hardened circuit design. As a result, a convenient way is needed of estimating primary photocurrents in transistors due to gamma radiation which does not involve measuring or testing devices. A new method of predicting primary photocurrent is advanced which makes it possible to calculate Ipp from manufacturer´s data sheets, making it unnecessary to have any measurements or test performed.