Spin-valve RAM cell

Author

Tang, D.D. ; Wang, P.K. ; Speriosu, V.S. ; Le, S. ; Kung, K.K.

Author_Institution

IBM Almaden Res. Center, San Jose, CA, USA

Volume

31

Issue

6

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

3206

Lastpage

3208

Abstract

This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full ΔR of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell

Keywords

giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetic switching; magnetoresistive devices; random-access storage; 2 ns; 6 micron; cell stripe; dc voltage difference; ferromagnetic thin film layers; giant magnetoresistance effects; high-speed sensing schemes; nonvolatile memory cell; read/write characteristics; spin-valve RAM cell; state switching; Copper; Magnetic domain walls; Magnetic materials; Magnetization; Nonvolatile memory; Random access memory; Read-write memory; Spin valves; Switches; Wires;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.490329

Filename

490329