DocumentCode
794387
Title
Gain spectra and saturation power of asymmetrical multiple quantum well semiconductor optical amplifiers
Author
Lysak, V.V. ; Kawaguchi, H. ; Sukhoivanov, I.A.
Volume
152
Issue
2
fYear
2005
fDate
4/8/2005 12:00:00 AM
Firstpage
131
Lastpage
139
Abstract
A new numerical model for calculating the steady-state gain properties of asymmetrical multiple quantum well (MQW) semiconductor optical amplifiers (SOAs) is presented. The model consists of a rate-equation system for carriers in each quantum well, with an integrated gain model. Using this model, the calculated gain spectra and saturation characteristics of an asymmetrical 6-QW SOA are compared with those for symmetrical MQW SOAs. The asymmetrical MQW SOA is found to have a gain bandwidth of about 137 nm and a saturation power of -8.8 dB m at 202 mA, both greater than conventional symmetrical MQW SOAs at the same gain.
Keywords
laser theory; optical saturation; quantum well lasers; semiconductor device models; semiconductor optical amplifiers; asymmetrical multiple quantum well semiconductor optical amplifiers; gain spectra; integrated gain model; numerical model; rate-equation system; saturation characteristics; saturation power; steady-state gain properties; symmetrical MQW SOAs;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:20045021
Filename
1425784
Link To Document