High temperature InAs infrared detector based on metal-insulator-semiconductor structure

Author

Su, Hung-der ; Chang, Shou-Zen ; Lee, Si-Chen ; Sun, Tai-Ping

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

31

Issue

11

fYear

1995

fDate

5/25/1995 12:00:00 AM

Firstpage

918

Lastpage

920

Abstract

The Au/Cr/a-SiN_x:H/(n)InAs/GaAs metal-insulator-semiconductor (MIS) capacitor was fabricated as a basic element of charge injection devices using plasma enhanced chemical vapour deposition. The electrical properties of the capacitor were analysed as a function of temperature using high frequency (1 MHz) capacitance-voltage measurements. It was demonstrated that the capacitor can still be biased into deep depletion at 180 K. When this capacitor is used as an integrated infrared detector in a charge injection device, it exhibits the capacity to detect infrared signals at a temperature of 180 K, higher than that of an InSb infrared detector (77 K), and the device can be cooled thermoelectrically

Keywords

III-V semiconductors; MIS capacitors; charge-coupled devices; indium compounds; infrared detectors; plasma CVD coatings; 1 MHz; 180 K; Au-Cr-SiN:H-InAs-GaAs; Au/Cr/a-SiN_x:H/(n)InAs/GaAs MIS capacitor; charge injection devices; deep depletion; electrical properties; high frequency capacitance-voltage measurements; high temperature InAs infrared detector; integrated infrared detector; metal-insulator-semiconductor structure; plasma enhanced chemical vapour deposition; thermoelectric cooling;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950628

Filename

390903