• DocumentCode
    794664
  • Title

    High gain resonant cavity enhanced InGaAs/AlGaAs heterojunction phototransistor resonant at 930 nm

  • Author

    Sjölund, O. ; Ghisoni, M. ; Larsson, A.

  • Author_Institution
    Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    917
  • Lastpage
    918
  • Abstract
    A resonant cavity enhanced InGaAs/AlGaAs phototransistor with high responsivity in the transmission window of the GaAs substrate is reported. The resonant wavelength is 929 nm with a full width at half maximum of 9 nm. The peak responsivity increases from 17 A/W at 0.1 μW incident optical power to 400 A/W at 100 μW
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical resonators; phototransistors; 0.1 to 100 muW; 930 nm; FWHM; GaAs; GaAs substrate; InGaAs-AlGaAs; InGaAs/AlGaAs heterojunction phototransistor; gain; resonant cavity; resonant wavelength; responsivity; transmission window;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950602
  • Filename
    390904
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794664