Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer

Author

Su, Yan-Kuin ; Wei, Sun-Chin ; Wang, Ruey-Lue ; Chang, Shoou-Jinn ; Ko, Chih-Hsin ; Kuan, Ta-Ming

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

24

Issue

10

fYear

2003

Firstpage

622

Lastpage

624

Abstract

Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure field effect transistors (HFETs) with and without Si-doped AlGaN layer were fabricated and investigated. HFETs with the Si-doped AlGaN carrier-injection layer show better DC performance, and the transconductance is 150 mS/mm. However, the HFETs with Si-doped AlGaN layer present the deviation from the 1/f noise at low frequency. The Lorentz shape was observed in the noise spectrum. It suggests that traps might be more pronounced in this kind of structure. Therefore, the DC characteristics of HFETs can be improved by the insertion of Si-doped AlGaN layer, but it can result in more low-frequency noise with the carrier-injection layer.

Keywords

1/f noise; III-V semiconductors; aluminium compounds; electron traps; field effect transistors; flicker noise; gallium compounds; semiconductor device noise; silicon; wide band gap semiconductors; 150 mS/mm; AlGaN-AlGaN:Si-AlGaN-GaN; DC characteristics; GaN-based HFETs; LF noise; Si-doped AlGaN carrier injection layer; flicker noise; heterostructure FETs; heterostructure field effect transistors; low-frequency noise; noise spectrum; transconductance; traps; 1f noise; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; III-V semiconductor materials; Low-frequency noise; MODFETs; Noise shaping; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.817869

Filename

1233934