Title :
State space synthesis of integrators based on the MOSFET square law
Author :
Eskiyerli, M.H. ; Payne, A.J. ; Toumazou, C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
fDate :
3/14/1996 12:00:00 AM
Abstract :
The authors present a design methodology on pure CMOS VLSI technology, which exploits the square law relationship between gate voltage and drain current in a saturated MOS transistor to implement state equations derived from a given transfer function. The process is illustrated with the design of an differential integrator
Keywords :
CMOS analogue integrated circuits; VLSI; integrated circuit design; integrating circuits; state-space methods; transfer functions; CMOS VLSI technology; MOSFET square law; design methodology; differential integrator; drain current; gate voltage; saturated MOS transistor; square law relationship; state equations; state space synthesis; transfer function;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960383
