DocumentCode :
79507
Title :
A 3-Gb/s/ch Simultaneous Bidirectional Capacitive Coupling Transceiver for 3DICs
Author :
Myat Thu Linn Aung ; Lim, Eul-Gyoon ; Yoshikawa, Tomoki ; Kim, Tony Tae-Hyoung
Author_Institution :
VIRTUS, Nanyang Technol. Univ., Singapore, Singapore
Volume :
61
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
706
Lastpage :
710
Abstract :
This brief presents a simultaneous bidirectional capacitive coupling transceiver for intertier communication in 3-D integrated circuits. A novel capacitive coupling interconnect structure is proposed. Optimization of the proposed interconnect structure for minimizing parasitic capacitance achieves the voltage swing VSW of 200 mV at the voltage sensing nodes. The data rate of 3 Gb/s/ch is demonstrated in the emulated-3D interconnect. The proposed transceiver consumes 140 μW at 3 Gb/s/ch. The test chip was fabricated in a 65-nm CMOS technology.
Keywords :
CMOS integrated circuits; three-dimensional integrated circuits; transceivers; 3D integrated circuits; 3DICs; CMOS technology; capacitive coupling interconnect structure; capacitive coupling transceiver; intertier communication; parasitic capacitance; power 140 muW; simultaneous bidirectional transceiver; size 65 nm; voltage 200 mV; voltage sensing nodes; voltage swing; Couplings; Crosstalk; Integrated circuit interconnections; Receivers; Three-dimensional displays; Transceivers; Voltage measurement; Capacitive coupling transceiver; four-level signaling; simultaneous bidirectional; three-dimensional integrated circuits (3DICs); transceiver;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2014.2335426
Filename :
6848764
Link To Document :
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