Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

Author

Giannoulis, Giannis ; Korpijarvi, Ville-Markus ; Iliadis, Nikos ; Makela, Jaakko ; Viheriala, Jukka ; Apostolopoulos, Dimitrios ; Guina, Mircea ; Avramopoulos, Hercules

Author_Institution

Sch. of Electr. & Comput. Eng., Nat. Technol. Univ. of Athens, Athens, Greece

Volume

27

Issue

16

fYear

2015

fDate

Aug.15, 15 2015

Firstpage

1691

Lastpage

1694

Abstract

We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of <;2.4 dB for return to zero formatting and of 1.9 dB for nonreturn to zero is demonstrated.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; nitrogen compounds; optical information processing; optical wavelength conversion; semiconductor optical amplifiers; GaInNAsSb-GaAs; fast gain dynamics; good thermal characteristics; high-performance SOA; high-speed data processing; power penalty; recovery time; return-to-zero formatting; semiconductor optical amplifiers; time 55 ps; wavelength 1.55 mum; wavelength conversion; Bit error rate; Gain; Gallium arsenide; Optical signal processing; Optical wavelength conversion; Semiconductor optical amplifiers; Temperature measurement; Dilute Nitrides; Photonic Integration; Photonic integration; Semiconductor Optical Amplifier (SOA); Wavelength Conversion; dilute nitrides; semiconductor optical amplifier (SOA); wavelength conversion;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2436697

Filename

7113825