Droop Improvement in InGaN/GaN Light-Emitting Diodes by Polarization Doping of Quantum Wells and Electron Blocking Layer

Author

Devi, Vanita ; Kumar, Ravindra ; Joshi, B.C.

Author_Institution

Dept. of Phys. & Mater. Sci. & Eng., Jaypee Inst. of Inf. Technol., Noida, India

Volume

11

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

30

Lastpage

35

Abstract

-Polarization doping in quantum wells and electron blocking layer is proposed to improve the emission intensity and efficiency droop of InGaN light-emitting diodes (LEDs). Band diagrams and the internal quantum efficiencies of LEDs are theoretically studied by the ATLAS simulation program. Numerical results show that the internal quantum efficiency of polarization doped LED structures are improved by 25% as compared to un-doped structures which can be due to accumulation of high density two-dimensional electron gas in quantum wells.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light polarisation; numerical analysis; semiconductor doping; semiconductor quantum wells; two-dimensional electron gas; wide band gap semiconductors; ATLAS simulation program; InGaN-GaN; LED; band diagram; droop improvement; electron blocking layer; emission intensity; high density two-dimensional electron gas; internal quantum efficiency; light-emitting diode; numerical simulation; polarization doping; quantum well; Current density; Doping; Gallium nitride; Indium; Light emitting diodes; Radiative recombination; Efficiency droop; InGaN; internal quantum efficiency (IQE); light-emitting diode (LED); two-dimensional electron gas;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2359229

Filename

6906227