Title :
High performance InGaAsP/InP strained-layer MQW lasers with reversed-mesa ridge-waveguide structures
Author :
Aoki, M. ; Komori, M. ; Tsuchiya, T. ; Sato, H. ; Uomi, K. ; Ohtoshi, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
6/8/1995 12:00:00 AM
Abstract :
Compressively-strained InGaAsP/InP MQW lasers with a simple reversed-mesa ridge-waveguide structure attain 300 mW output and high temperature lasing operation up to 165°C
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 165 degC; 300 mW; InGaAsP-InP; compressively-strained MQW lasers; high temperature lasing operation; reversed-mesa ridge-waveguide structures; strained-layer MQW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950656
