Reliability of planar InP-InGaAs avalanche photodiodes with recess etching

Author

Jung, Jihoun ; Kwon, Yong Hwan ; Hyun, Kyung Sook ; Yun, Ilgu

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

Volume

14

Issue

8

fYear

2002

Firstpage

1160

Lastpage

1162

Abstract

This letter presents the reliability of planar InP-InGaAs avalanche photodiodes (APDs) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The activation energy of the degradation mechanism and device median lifetime were estimated. Based on the test results, it is concluded that the planar InP-InGaAs APDs with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; etching; gallium arsenide; indium compounds; life testing; optical receivers; optical testing; semiconductor device reliability; semiconductor device testing; 10 Gbit/s; InP-InGaAs; accelerated life tests; activation energy; breakdown voltage; dark current monitoring; degradation mechanism; device median lifetime; optical receiver; planar InP-InGaAs avalanche photodiode reliability; recess etching; Avalanche photodiodes; Dark current; Degradation; Etching; Failure analysis; Life estimation; Life testing; Lifetime estimation; Monitoring; Optical receivers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1022004

Filename

1022004