• DocumentCode
    796183
  • Title

    Ultra-thin benzocyclobutene bonding of III-V dies onto SOI substrate

  • Author

    Roelkens, G. ; Thourhout, D. Van ; Baets, R.

  • Author_Institution
    Dept. of Inf. Technol., Univ. of Ghent, Belgium
  • Volume
    41
  • Issue
    9
  • fYear
    2005
  • fDate
    4/28/2005 12:00:00 AM
  • Firstpage
    561
  • Lastpage
    562
  • Abstract
    The bonding of InP/InGaAsP heterostructures dies onto an SOI substrate is reported. Bonding layer thicknesses down to 200 nm were reproducibly achieved. Bonding was achieved both on unprocessed SOI substrates as on processed SOI substrates containing high index contrast waveguides.
  • Keywords
    III-V semiconductors; bonding processes; gallium arsenide; indium compounds; integrated optoelectronics; microassembling; organic compounds; silicon-on-insulator; III-V dies; InP-InGaAsP; InP-InGaAsP heterostructure dies; SOI substrate; bonding layer thickness; contrast waveguides; die bonding; ultra-thin benzocyclobutene bonding;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20050807
  • Filename
    1426585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=796183