Optical pump-probe measurements of the latency of silicon CMOS optical interconnects

We present the first measurements of optical-electrical-optical conversion latency in a hybridly-integrated optoelectronic/silicon complementary metal-oxide-semiconductor (CMOS) chip designed for optical interconnection. Using an optical pump-probe technique, we perform precise measurements with picosecond resolution that closely match our simulations. Our findings suggest that optical interconnects have the potential to provide equal or lower latency than on-chip global wires in future CMOS microelectronics.