Film Growth of Cd1-xMnxTe on GaAs by ICB Technique

We investigated the crystallographic and magneto-optical properties of Cd1-xMnxTe films grown on GaAs (100) susbtrates. The orientation, either (111) or (100), of Cd1¿xMnxTe films on GaAs (100) substrates was successfully controlled by changing either the electron current Ie for ionization or the acceleration voltage Va. This difference in the growth orientation was attributed to changes in nucleus formation in the initial stage of film growth caused by the electric charge and kinetic energy of ionized clusters. From measurements of the Kerr rotation spectra, it was found that the Faraday rotation of films on GaAs substrates exhibited the same characteristics as that of films on sapphire substrates.