Small-signal and temperature noise model for MOSFETs

Author

Pascht, Andreas ; Grözing, Markus ; Wiegner, Dirk ; Berroth, Manfred

Author_Institution

Inst. of Electr. & Opt. Commun. Eng., Stuttgart Univ., Germany

Volume

50

Issue

8

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1927

Lastpage

1934

Abstract

The present CMOS technology provides n-channel MOSFETs with a transit frequency beyond 30 GHz, which are attractive for RF integrated circuits, e.g., low-noise amplifiers. This paper presents an improved deembedding procedure for extraction of parasitic elements of MOSFETs. The extraction determines the intrinsic elements of the small-signal equivalent circuit. As a result, a new method to determine the gate capacitance is presented. This deembedding procedure is based on an analytical solution of the equations and facilitates the determination of the elements at any specific frequency. Moreover, a temperature noise model is presented, which is based on the small-signal equivalent circuit with an analytical description of the channel noise. This enables a complete noise modeling of all four noise parameters and the determination of the dominant noise sources. Finally, the noise-figure measurements are compared with the simulation results.

Keywords

MOSFET; equivalent circuits; semiconductor device models; semiconductor device noise; 30 GHz; CMOS technology; RF integrated circuit; deembedding method; gate capacitance; low-noise amplifier; n-channel MOSFET; parameter extraction; parasitic element; small-signal equivalent circuit; temperature noise model; CMOS integrated circuits; CMOS technology; Circuit noise; Equivalent circuits; Integrated circuit noise; Integrated circuit technology; MOSFETs; Radio frequency; Semiconductor device modeling; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.801339

Filename

1022037