• DocumentCode
    796520
  • Title

    MESFET lift-off from GaAs substrate to glass host

  • Author

    Van Hoof, Chris ; De Raedt, W. ; Van Rossum, M. ; Borghs, G.

  • Author_Institution
    Interuniv. Micro-Electron. Center, Leuven, Belgium
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    136
  • Lastpage
    137
  • Abstract
    The authors report for the first time on epitaxially grown fully processed MESFETs lifted off from the GaAs substrate and deposited on glass as a new host material. The layer thickness of the epitaxial film was 0.5 mu m. Very good device performance was obtained with gm values of 155 mS/mm. This opens interesting possibilities for hybrid or monolithic integration of III-V technology with other materials technologies.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; etching; gallium arsenide; glass; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor technology; substrates; 0.5 micron; 155 mS; GaAs; GaAs substrate; III-V technology; MESFET lift-off; epitaxial film; fabrication process; fully processed device transplantation; glass host; glass substrate; molecular beam epitaxy; semiconductor etching; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890099
  • Filename
    14269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=796520