High electron mobility in SiGe/Si n-MODFET structures on sapphire substrates

Author

Mueller, C.H. ; Croke, E.T. ; Alterovitz, S.A.

Author_Institution

Analex Corp., Cleveland, OH, USA

Volume

Issue

fYear

2003

Firstpage

1353

Lastpage

1354

Abstract

For the first time, SiGe/Si n-modulation doped field effect transistor (n-MODFET) structures have been grown on sapphire substrates. A room temperature electron mobility value of 1271 cm²/V-s at an electron carrier density (n_e) of 1.6×10¹² cm^-2 was obtained. At 250 mK, the mobility increases to 13 313 cm²/V-s (n_e=1.33×10¹² cm^-2) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.

Keywords

Ge-Si alloys; electron density; electron mobility; elemental semiconductors; high electron mobility transistors; semiconductor materials; two-dimensional electron gas; 250 mK; Shubnikov-de-Haas oscillations; SiGe-Si; SiGe/Si; electron carrier density; electron mobility; n-MODFET structures; sapphire substrates; two-dimensional electron gas;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030871

Filename

1234640

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=796751