Title :
Ultrahigh-bandwidth (42 GHz) polarisation-independent ridge waveguide electroabsorption modulator based on tensile strained InGaAsP MQW
Author :
Satzke, K. ; Baums, D. ; Cebulla, U. ; Haisch, H. ; Kaiser, D. ; Lach, E. ; Kühn, E. ; Weber, J. ; Weinmann, R. ; Wiedemann, P. ; Zielinski, E.
Author_Institution :
Optoelectron. Components Div., Alcatel SEL, Stuttgart, Germany
fDate :
11/9/1995 12:00:00 AM
Abstract :
Electroabsorption modulators with polarisation independence of chirp and transmission (TE/TM sensitivity <0.4 dB at 1550 nm) over a wide wavelength range from 1540 nm to 1560 nm have been realised using tensile strained InGaAsP quantum wells. The fabricated devices show 42 GHz modulation bandwidth and 1.8 V drive voltage, resulting in a high bandwidth-to-drive-voltage ratio of 23.3 GHz/V
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical waveguides; ridge waveguides; semiconductor quantum wells; 1.8 V; 1540 to 1560 nm; 42 GHz; InGaAsP; electroabsorption modulator; multiple quantum well; polarisation-independent modulator; ridge waveguide; tensile strained InGaAsP MQW; ultrahigh-bandwidth type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951397
