DocumentCode
797115
Title
Breakdown and conduction phenomena in MIS structures
Author
Lim, K.J. ; Kim, M.N. ; Chae, H.I. ; Kang, S.H. ; Bae, M.H.
Author_Institution
Dept. of Electr. Eng., Chungbuk Nat. Univ., South Korea
Volume
27
Issue
3
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
623
Lastpage
628
Abstract
The breakdown and conduction characteristics in metal-insulator-semiconductor (MIS) structures having a thin silicon nitride layer (5.8 to 8.3 nm) as insulator were investigated. The nitride layer was grown on a silicon wafer by low-pressure chemical vapor deposition. The characteristics of breakdown voltage, time-dependent dielectric breakdown, and current vs. voltage of the structure were measured
Keywords
electric breakdown of solids; elemental semiconductors; high field effects; metal-insulator-semiconductor structures; silicon; silicon compounds; I-V characteristics; MIS structures; Si-SiN; breakdown voltage; conduction characteristics; high field; low-pressure chemical vapor deposition; time-dependent dielectric breakdown; Breakdown voltage; Capacitors; Chemical vapor deposition; Current measurement; Dielectrics and electrical insulation; EPROM; Electric breakdown; Random access memory; Semiconductor films; Silicon;
fLanguage
English
Journal_Title
Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
0018-9367
Type
jour
DOI
10.1109/14.142727
Filename
142727
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