DocumentCode
797226
Title
Multiple quantum well-tuned GaAs/AlGaAs laser
Author
Cai, Bingjing ; Seeds, Alwyn J. ; Rivers, A.
Author_Institution
Univ. Coll., London, UK
Volume
25
Issue
2
fYear
1989
Firstpage
145
Lastpage
146
Abstract
The electrorefractive effect in a pin multiple-quantum-well (MQW) modulator has been used in a novel, electronically tuned, external-cavity GaAs/AlGaAs laser system. Mode selection over a frequency range of 600 GHz (1.4 nm change in wavelength) has been demonstrated for a 6 V change in MQW modulator bias, with less than 0.6 dB variation in laser output power.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser tuning; optical communication equipment; optical modulation; semiconductor junction lasers; 6 V change; GaAs-AlGaAs lasers; MQW modulator bias; electronically tuned; electrorefractive effect; external-cavity; frequency range; variation in laser output power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890105
Filename
14275
Link To Document