Advances in Linear Modeling of Microwave Transistors

Author

Landa, Andrés Zárate-de ; Zúñiga-Juárez, José Eleazar ; Loo-Yau, José Raúl ; Reynoso-Hernández, J. Apolinar ; Maya-Sánchez, María Del Carmen ; Del Valle-Padilla, Juan Luis

Author_Institution

Centre de Investig. Cienc. y de Educ. Super. de Ensenada (CICESE), Ensenada

Volume

10

Issue

2

fYear

2009

fDate

4/1/2009 12:00:00 AM

Abstract

Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rather than MESFETs, high electron mobility transistors (HEMTs) and pseudomorphic HEMTs based on gallium arsenide (GaAs) or indium phosphide (InP) semiconductor technology. While AlGaN/GaN and SiC are good candidates for high-power applications, GaAs and InP semiconductor technologies are the preferred transistors in low-power, low-voltage, and low-noise applications [1].

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; microwave transistors; semiconductor device models; silicon compounds; AlGaN-GaN; GaAs; InP; SiC; heterojunction field effect transistors; high electron mobility transistors; high-power amplifier; metal semiconductor field effect transistors; microwave transistors; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; Indium phosphide; MESFETs; MODFETs; Microwave FETs; Microwave transistors; Silicon carbide;

fLanguage

English

Journal_Title

Microwave Magazine, IEEE

Publisher

ieee

ISSN

1527-3342

Type

jour

DOI

10.1109/MMM.2008.931675

Filename

4906382