Electrical characteristics of oxide-nitride-oxide films formed on tunnel-structured stacked capacitors

Author

Matsuo, Naoto ; Sasaki, Akio

Volume

42

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

1340

Lastpage

1343

Abstract

Current conduction mechanism of oxide-nitride-oxide films formed on tunnel-structured stacked capacitor (TSSC) was studied. At positive and negative bias, the Poole-Frenkel (P-F) conduction of holes in the nitride (SiN_x) film dominates the total leakage current. From the P-F plot, the relative dielectric constant of the SiN_x was calculated. The electric field inside the structure was also calculated by assuming the model that characterizes the electrode shape inside the tunnel. From the results, the reason why the reliability of the TSSC is not lowered in comparison with the conventional stacked capacitor is discussed

Keywords

DRAM chips; MIS capacitors; Poole-Frenkel effect; dielectric thin films; integrated circuit reliability; leakage currents; permittivity; silicon compounds; ONO films; Poole-Frenkel conduction; SiN_x film; SiO₂-Si₃N₄-SiO₂; current conduction mechanism; electrical characteristics; leakage current; oxide-nitride-oxide films; relative dielectric constant; reliability; tunnel-structured stacked capacitors; Capacitors; Chemical vapor deposition; Conductive films; Electric variables; Electrodes; Gases; Optical films; Random access memory; Scanning electron microscopy; Shape;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.391219

Filename

391219