Title :
Solution Processed Polymer Near-Infrared Photodiode With Electron and Hole Blockers
Author :
Chi Hang Cheung ; Do Young Kim ; Subbiah, J. ; Amb, Chad M. ; Reynolds, John R. ; So, Franky
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
A solution-processed polymer near-infrared photodetector with charge blocking layers is reported using a low-bandgap polymer, poly[(4,4´-bis(2-ethylhexyl)dithieno [3, 2-b:2´,3´-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)4,7-diyl]. Zinc oxide nanoparticles and poly[(9,9´-dioctylfluorenyl-2,7-diyl)-co-(4,4´-(N-(4-sec-butyl))diphenylamine)] are used as a hole blocking layer and an electron blocking layer, respectively. A maximum detectivity of 2 × 1013 Jones is achieved with a 330-nm-thick photoactive layer that absorbs 98% of the incident light at 780 nm.
Keywords :
II-VI semiconductors; infrared detectors; light absorption; nanoparticles; optical polymers; organic semiconductors; photodetectors; photodiodes; wide band gap semiconductors; zinc compounds; ZnO; charge blocking layers; electron blocking layer; hole blocking layer; incident light; low-bandgap polymer; photoactive layer; poly[(4,4´-bis(2-ethylhexyl)dithieno [3,2-b:2´,3´-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)4,7-diyl]; poly[(9,9´-dioctylfluorenyl-2,7-diyl)-co-(4,4´-(N-(4-sec-butyl))diphenylamine)]; size 330 nm; solution processed polymer near-infrared photodiode; solution-processed polymer near-infrared photodetector; wavelength 780 nm; zinc oxide nanoparticles; Absorption; Charge carrier processes; Dark current; Educational institutions; Photodetectors; Polymers; Zinc oxide; Charge carrier blocking layers; near-infrared (IR) photodetectors (PDs); polymer semiconductors; solution-processed;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2357022
