• DocumentCode
    798160
  • Title

    Benign mechanism giving rise to kinks in GaAs MESFET and HEMT I(V) characteristics

  • Author

    Ladbrooke, P.H. ; Bridge, J.P.

  • Author_Institution
    GaAs Code Ltd., Cambridge, UK
  • Volume
    31
  • Issue
    22
  • fYear
    1995
  • fDate
    10/26/1995 12:00:00 AM
  • Firstpage
    1947
  • Lastpage
    1948
  • Abstract
    Kinks in GaAs MESFET and HEMT I(V) characteristics may arise from a change in the depletion layer dimensions caused by redistribution of the two-dimensional electric field when the space-charge layer reaches the drain-side recess edge. The mechanism is benign in that it does not question material quality and growth
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; space charge; GaAs; HEMT; I-V characteristics; MESFET; depletion layer; kinks; space charge; two-dimensional electric field;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951314
  • Filename
    490679
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=798160