DocumentCode
798219
Title
Thermal simulation of energetic transients in multilevel metallisation systems
Author
Gui, X. ; Dew, S.K. ; Brett, M.J.
Author_Institution
Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada
Volume
31
Issue
22
fYear
1995
fDate
10/26/1995 12:00:00 AM
Firstpage
1954
Lastpage
1956
Abstract
Thermal simulation of transients due to high current pulses in multilevel metallisation systems has been performed. Such transients can cause metallisation failure and are of particular concern for field-programmable gate array (FPGA) devices with voltage programmable links (VPLs). To prevent this failure, the maximum pulse width against current density has been determined for a three-level metal system. Comparison with a single-level system is also illustrated
Keywords
failure analysis; field programmable gate arrays; integrated circuit metallisation; integrated circuit modelling; transient analysis; current pulses; failure; field-programmable gate arrays; multilevel metallisation; thermal simulation; transients; voltage programmable links;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951293
Filename
490684
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