• DocumentCode
    798250
  • Title

    Integration of Germanium-on-Insulator and Silicon MOSFETs on a Silicon Substrate

  • Author

    Feng, Jia ; Liu, Yaocheng ; Griffin, Peter B. ; Plummer, James D.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA
  • Volume
    27
  • Issue
    11
  • fYear
    2006
  • Firstpage
    911
  • Lastpage
    913
  • Abstract
    The monolithic integration of germanium-on-insulator (GeOI) p-MOSFETs with silicon n-MOSFETs on a silicon substrate is demonstrated. The GeOI p-MOSFETs are fabricated on the oxide for silicon device isolation based on the newly developed rapid-melt-growth method. CMOS inverters consisting of the silicon n-MOSFET and GeOI p-MOSFET were obtained, and the measured results show that the processing of high-performance GeOI devices is compatible with bulk-silicon technology
  • Keywords
    MOSFET; germanium; isolation technology; semiconductor-insulator boundaries; silicon; CMOS inverters; MOSFET; bulk-silicon technology; germanium-on-insulator; rapid melt growth method; silicon device isolation; Amorphous materials; CMOS process; Germanium; Inverters; MOSFET circuits; Monolithic integrated circuits; Photodetectors; Silicon devices; Silicon on insulator technology; Substrates; Germanium-on-insulator (GeOI); MOSFET; heterogeneous integration; monolithic integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.883286
  • Filename
    1715464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=798250