Modulating the bipolar junction transistor subjected to neutron irradiation for integrated circuit simulation

Author

Liou, Juin J. ; Yuan, Jiann-shiun ; Shakouri, Hooman

Author_Institution

Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA

Volume

39

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

593

Lastpage

597

Abstract

Bipolar junction transistors (BJTs) are susceptible to particle bombardment in radiative environment. A model that is capable of predicting the performance of a BJT subjected to neutron irradiation and that is suitable for SPICE circuit simulation is presented. It is shown that neutron irradiation affects the emitter-base space-charge region capacitance slightly but strongly influences the forward-active current gain. Results calculated from the present model compared favorably with measured dependencies available in the literature. The model was implemented in SPICE, and the performance of a BJT differential amplifier was simulated

Keywords

bipolar transistors; differential amplifiers; equivalent circuits; neutron effects; radiation hardening (electronics); semiconductor device models; BJT; SPICE circuit simulation; bipolar junction transistor; differential amplifier; emitter-base capacitance; emitter-base space-charge region capacitance; forward-active current gain; integrated circuit simulation; model; modelling; neutron irradiation; particle bombardment; radiative environment; Bipolar integrated circuits; Bipolar transistor circuits; Circuit simulation; Integrated circuit modeling; Neutrons; Radiative recombination; SPICE; Semiconductor process modeling; Silicon; Spontaneous emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.123483

Filename

123483