Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage

Author

Nishinohara, Kazumi ; Shigyo, Naoyuki ; Wada, Tetsunori

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

39

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

634

Lastpage

639

Abstract

The effects of fluctuations in dopant distribution on the MOSFET threshold voltage and their dependence on the scaling were investigated using device simulation. The simulation indicates that the microscopic fluctuations in dopant distribution not only induce threshold-voltage value. It was found that the threshold-voltage value deviation is mostly affected by fluctuating dopant distribution at the substrate surface, rather than throughout the depletion layer. Discussion incorporating microscopic fluctuations in surface electric potential, due to fluctuating dopant distribution, explained not only deviations but also the mean value lowering of the threshold voltage in the simulation

Keywords

impurity distribution; insulated gate field effect transistors; semiconductor doping; MOSFET threshold voltage; device simulation; dopant distributions; microscopic fluctuations; scaling; substrate surface; surface electric potential; Atomic layer deposition; Dielectric substrates; Electric potential; FETs; Fluctuations; MOSFET circuits; Microscopy; Potential energy; Silicon devices; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.123489

Filename

123489