Characterization and Analysis of 1.3-μm InAs/InGaAs Self-Assembled Quantum Dot Lasers

Author

Chongyang Liu ; Hong Wang ; Qianqian Meng

Author_Institution

Temasek Labs., Nanyang Technol. Univ., Singapore, Singapore

Volume

13

Issue

3

fYear

2014

fDate

May-14

Firstpage

446

Lastpage

451

Abstract

High performance 1.3-μm GaAs-based InAs/InGaAs quantum dot (QD) lasers have been fabricated. The QD lasers have demonstrated low threshold current, high output power as well as high temperature operation. Temperature-dependent (20-100°C) and excitation power-dependent (12-700 mW) photoluminescence (PL) measurements have been carried out on the QD laser structures. Both ground state (GS) and excited state (ES) luminescence has been observed in the PL spectra as well as in the lasing spectra. Rate equations were used to interpret the PL behavior of the QD structures. High radiative recombination efficiency in the QD structure has been verified even at 100°C. The excitonic modal gain has been calculated and compared with the experimentally obtained modal gain value by the Hakki-Paoli method from the QD laser with good agreement.

Keywords

III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; photoluminescence; quantum dot lasers; self-assembly; InAs-InGaAs; excitation power-dependent photoluminescence; excited state; excitonic modal gain; ground state; output power; power 12 mW to 700 mW; radiative recombination efficiency; rate equations; self-assembled quantum dot lasers; size 1.3 mum; temperature 20 degC to 100 degC; temperature-dependent photoluminescence; threshold current; Excitons; Laser excitation; Measurement by laser beam; Quantum dot lasers; Vertical cavity surface emitting lasers; Hakki–Paoli method; modal gain; photoluminescence (PL); quantum dot (QD) laser; rate equation; semiconductor laser;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2013.2288320

Filename

6654352