Effect of GaAs Step Layer Thickness in InGaAs/GaAsP Stepped Quantum-Well Solar Cell

Author

Wen, Yu ; Wang, Yunpeng ; Watanabe, Kentaroh ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan

Volume

3

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

289

Lastpage

294

Abstract

A multiple-stepped quantum-well (MSQW) solar cell, in which GaAs step layers are sandwiched between strain-balanced InGaAs wells and GaAsP barriers, has been proposed, and the improved sub-GaAs-bandgap quantum efficiency has been demonstrated. The optical properties of MSQW solar cells with different GaAs step layer thickness are investigated. The recombination losses inside the QWs have been studied by bias-dependent photoluminescence. The recombination losses decrease with increasing the GaAs step layer thickness. Controlling the GaAs step layer thickness is a feasible way to increase short-circuit current without largely degrading open-circuit voltage.

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; solar cells; InGaAs-GaAsP; MSQW solar cell; bandgap quantum efficiency; bias dependent photoluminescence; open circuit voltage; optical properties; recombination loss; short-circuit current; step layer thickness; stepped quantum well solar cell; Absorption; Educational institutions; Gallium arsenide; Indium gallium arsenide; Photovoltaic cells; Quantum well devices; Radiative recombination; Absorption; GaAs step layer; quantum efficiency; stepped quantum-well solar cell;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2012.2212698

Filename

6365221