• DocumentCode
    799017
  • Title

    A coupled plasma and sheath model for high density reactors

  • Author

    Bose, Deepak ; Govindan, T.R. ; Meyyappan, M.

  • Author_Institution
    Eloret Corp., NASA Ames Res. Center, Moffett Field, CA, USA
  • Volume
    30
  • Issue
    2
  • fYear
    2002
  • fDate
    4/1/2002 12:00:00 AM
  • Firstpage
    653
  • Lastpage
    659
  • Abstract
    We present a coupled plasma and collisionless sheath model for the simulation of high-density plasma processing reactors. Due to inefficiencies in numerical schemes and the resulting computational burden, a coupled multidimensional plasma and sheath simulation has not been possible for gas mixtures and high-density reactors of practical interest. In this work, we demonstrate that with a fully implicit algorithm and a refined computational mesh, a self-consistent simulation of a reactor including both the plasma and sheath is feasible. We discuss the details of the model equations, the importance of ion inertia, and the resulting sheath profiles for argon and chlorine plasmas. We find that at low operating pressures (10-30 mtorr), the charge separation occurs only within a 0.5-mm layer near the surface in a 300 mm inductively coupled plasma etch reactor. A unified simulation eliminates the use of offline or loosely coupled and oversimplified sheath models which generally leads to uncertainties in ion flux and sheath electrical properties.
  • Keywords
    plasma materials processing; plasma pressure; plasma sheaths; plasma simulation; 10 to 30 mtorr; charge separation; collisionless sheath model; computational burden; computational mesh; coupled multidimensional plasma; coupled plasma-sheath model; fully implicit algorithm; high density reactors; high-density plasma processing reactors; high-density reactors; inductively coupled plasma etch reactor; ion flux; loosely coupled sheath models; model equations; numerical schemes; offline coupled sheath models; operating pressures; plasma materials-processing applications; plasma simulation; self-consistent simulation; sheath electrical properties; sheath profiles; sheath simulation; Argon; Computational modeling; Equations; Inductors; Multidimensional systems; Plasma applications; Plasma density; Plasma materials processing; Plasma sheaths; Plasma simulation;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2002.1024264
  • Filename
    1024264