Title :
Finite element analysis of SiGe heterojunction devices
Author :
Krishna, G.H.R. ; Aditya, Amit Kumar ; Chakrabarti, Nirmal B. ; Banerjee, Swapna
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Inst. of Technol., Kharagpur, India
fDate :
7/1/1995 12:00:00 AM
Abstract :
Two SiGe devices, a n+-n-p heterojunction diode and an n-p-n HBT have been analyzed using a two-dimensional bipolar device simulator which is based on the finite element method. The various shape functions used in the finite element formulations have been detailed. The dependence of the device characteristics on the various Ge mole-fraction material parameters has been studied. The variation of current gain of SiGe HBT with temperature is discussed
Keywords :
Ge-Si alloys; finite element analysis; heterojunction bipolar transistors; semiconductor device models; semiconductor diodes; semiconductor materials; Ge mole-fraction material parameters; SiGe; SiGe heterojunction devices; current gain; device characteristics; finite element analysis; finite element method; n-p-n HBT; n+-n-p heterojunction diode; shape functions; temperature dependence; two-dimensional bipolar device simulator; Analytical models; Electron mobility; Finite element methods; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Poisson equations; Silicon alloys; Silicon germanium; Temperature;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
