• DocumentCode
    799160
  • Title

    Permeability of Fe-Si Films with Preferred Crystallographic Orientation

  • Author

    Hosono, A. ; Shimada, Y.

  • Author_Institution
    Tohoku University.
  • Volume
    6
  • Issue
    11
  • fYear
    1991
  • Firstpage
    953
  • Lastpage
    959
  • Abstract
    The initial permeability of Fe-Si polycrystalline thin films was investigated. Based on calculations of the magneto-crystalline anisotropy and initial permeability which assume that the magnetization is confined to a certain crystal plane, Fe-Si polycrystalline thin films oriented with the (111) plane parallel to the film plane are ´ expected to have a high permeability of about 5000. Fe-6.9 wt% Si films were deposited on three kinds of underlayer with three different crystal orientations. The initial permeability of Fe-Si films on ZnSe underlayers with (111) orientation is about 1700, which is higher than that of films with a (100) or (110) orientation.
  • Keywords
    Anisotropic magnetoresistance; Crystallography; Magnetic anisotropy; Magnetic confinement; Magnetization; Permeability; Perpendicular magnetic anisotropy; Semiconductor films; Transistors; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1991.4565287
  • Filename
    4565287