A MOSFET-based model of a class 2 nerve membrane

Author

Kohno, Takashi ; Aihara, Kazuyuki

Author_Institution

ERATO Aihara Complexity Modeling Project, Tokyo, Japan

Volume

16

Issue

3

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

754

Lastpage

773

Abstract

We have constructed a nerve membrane using MOSFET circuitry, which can be a basic element of an FET-based neural system. Its mechanism of action potentials generation is designed to reproduce that of the Hodgkin-Huxley equations. The responses to singlet, doublet, repetitive pulse, and sustained stimuli are analyzed to show that it exhibits similar properties to the Hodgkin-Huxley equations; namely, 1) excitable dynamics with generation of action potentials, 2) the existence of a chaotic response to periodic stimuli, and 3) Class 2 excitability. It is known that Class 2 excitability is generated by an inverted Hopf bifurcation. We have applied Hopf bifurcation theory to our nerve membrane´s system equations and have shown a routine for ascertaining whether a certain parameter set generates an inverted Hopf bifurcation.

Keywords

MOSFET; MOSFET circuits; bifurcation; biomembranes; field effect integrated circuits; neural nets; FET neural system; Hodgkin-Huxley equation; MOSFET circuitry; class 2 excitability; class 2 nerve membrane; inverted Hopf bifurcation; Bifurcation; Biomembranes; Chaos; Equations; MOSFET circuits; Mathematical model; Neurons; Permeability; Semiconductor device modeling; Silicon; Class 2 neurons; Hodgkin–Huxley equations; Hopf bifurcation; MOSFET circuits; Silicon nerve membrane; neuromorphic engineering; phase plane analysis; silicon neuron; Action Potentials; Biomimetics; Cell Membrane; Computer Simulation; Membrane Potentials; Models, Neurological; Neurons; Transistors;

fLanguage

English

Journal_Title

Neural Networks, IEEE Transactions on

Publisher

ieee

ISSN

1045-9227

Type

jour

DOI

10.1109/TNN.2005.844855

Filename

1427777