CMOS Transconductors With Nearly Constant Input Ranges Over Wide Tuning Intervals

Author

Bruschi, Paolo ; Sebastiano, Fabio ; Nizza, Nicolò

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Pisa Univ.

Volume

53

Issue

10

fYear

2006

Firstpage

1002

Lastpage

1006

Abstract

Three different bias strategies aimed to reduce the effect of tuning on either the differential input range or the common-mode range of triode-region CMOS transconductors are presented. The method is applied to an original transconductor topology that is optimized to produce ultralow G_m values. A prototype circuit, which was designed with the 0.35-mum bipolar-CMOS-DMOS (BCD6) process of STMicroelectronics, is presented. The effectiveness and limitations of the method are characterized by means of electrical simulations

Keywords

CMOS integrated circuits; bipolar integrated circuits; circuit tuning; 0.35 micron; CMOS transconductors; bipolar-CMOS-DMOS process; common-mode range; differential input range; low-frequency filters; prototype circuit; tuning intervals; Chemical sensors; Circuit optimization; Circuit simulation; Low pass filters; MOSFETs; Mirrors; Optimization methods; Stability; Transconductors; Voltage; CMOS transconductor; constant input range; low-frequency filters;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2006.882126

Filename

1715565