DocumentCode
7995
Title
Novel Active ESD Clamps for High-Voltage Applications
Author
Yiqun Cao ; Glaser, Ulrich
Author_Institution
Infineon Technol., Neubiberg, Germany
Volume
13
Issue
2
fYear
2013
fDate
Jun-13
Firstpage
388
Lastpage
397
Abstract
Large power MOS transistors (bigMOS) have potential electrostatic discharge (ESD) protection capabilities and are often used in actively controlled ESD clamps. In high-voltage and especially automotive applications ranging typically from 10 to 100 V operation voltage, statically triggered active ESD clamps are often used due to their false triggering safety. This paper presents novel statically triggered active ESD clamps, which rely on advanced trigger circuits optimizing the gate control of the bigMOS. With enhanced tailoring to the application requirements, the active ESD clamps substantially improve clamp area efficiency and significantly reduce ESD window requirements.
Keywords
clamps; electrostatic discharge; power MOSFET; trigger circuits; ESD protection capability; ESD window requirement; actively controlled ESD clamp; advanced trigger circuit; automotive application; bigMOS; clamp area efficiency; electrostatic discharge protection; false triggering safety; gate control; high-voltage application; power MOS transistor; statically triggered active ESD clamp; voltage 10 V to 100 V; Active clamps; bigMOS; controlled snapback; electrostatic discharges (ESDs); human body model (HBM); safe operating area (SOA); statically triggered clamps; transmission-line pulse (TLP);
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2013.2256910
Filename
6494273
Link To Document