Contact-Length-Dependent Contact Resistance of Top-Gate Staggered Organic Thin-Film Transistors

Author

Wang, Hong ; Li, Ling ; Ji, Zhuoyu ; Lu, Congyan ; Guo, Jingwei ; Wang, Long ; Liu, Ming

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

69

Lastpage

71

Abstract

In this letter, a contact-length-dependent contact resistance model for top-gate staggered organic thin-film transistors (OTFTs) is proposed. The presented model can well describe the contact resistance increase as the distance by which the gate electrode overlaps the source and drain contact (contact length) decrease. Based on the contact resistance model, the contact-length-dependent cutoff frequency of OTFTs is described, and an optimized contact length can be obtained for high-frequency OTFT applications.

Keywords

contact resistance; organic field effect transistors; thin film transistors; OTFT; contact length dependent contact resistance; drain contact; gate electrode; source contact; top gate staggered organic thin film transistors; Contact resistance; Cutoff frequency; Logic gates; Organic thin film transistors; Resistance; Contact length; contact resistance; cutoff frequency; organic thin-film transistor (OTFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2224631

Filename

6365226