DocumentCode
80019
Title
Improved 1.3- 
Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
Author
Lin, Wei-Hsun ; Wang, Kai-Wei ; Lin, Shih-Yen ; Wu, Meng-Chyi
Author_Institution
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
25
Issue
1
fYear
2013
fDate
Jan.1, 2013
Firstpage
97
Lastpage
99
Abstract
Room-temperature 1.3-μm electroluminescence is observed for the InGaAs-capped GaSb quantum rings (QRs). The increasing carrier density in the InGaAs-capped type-II GaSb QRs would induce a larger blue shift in the same laser pumping power span and enhance the luminescence intensity. The enhanced luminescence intensity, a larger blue shift of peak wavelength, and 1.3-μm emission of the InGaAs-capped QR structure have revealed its potential application in multi-wavelength light-emitting devices in the near infrared range.
Keywords
III-V semiconductors; carrier density; electroluminescence; gallium arsenide; indium compounds; semiconductor quantum dots; spectral line shift; InGaAs-GaSb-GaAs; blue shift; capped type quantum rings; carrier density; electroluminescence; laser pumping power span; luminescence intensity; temperature 293 K to 298 K; wavelength 1.3 mum; Gallium arsenide; Indium gallium arsenide; Laser excitation; Luminescence; Power lasers; Pump lasers; Quantum dots; GaSb quantum rings; light-emitting devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2012.2229700
Filename
6365232
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