Mode-Controlled Tapered Lasers Based on Quantum Dots

Author

Weinmann, Pia ; Zimmermann, Christian ; Schlereth, Thomas Walter ; Schneider, Christian ; Höfling, Sven ; Kamp, Martin ; Forchel, Alfred

Author_Institution

Tech. Phys., Univ. Wurzburg, Wurzburg

Volume

15

Issue

3

fYear

2009

Firstpage

780

Lastpage

784

Abstract

Wavelength control of tapered quantum dot (QD) lasers was achieved by adding a distributed Bragg reflector as wavelength-selective element to the devices. The Bragg wavelength of around 920 nm is matched to the gain of the single layer of InGaAs QDs that is used as active material. Devices with 1.4-mm-long tapers have reached output powers of over 1 W, and over 2 W were obtained from lasers with 3-mm-long tapers. The emission of the devices is restricted to a very narrow spectral range, with side-mode suppression ratios of over 40 dB.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser beams; laser modes; quantum dot lasers; semiconductor quantum dots; InGaAs; active material; distributed Bragg reflector; mode-controlled tapered quantum dot laser; narrow spectral range; side-mode suppression ratio; size 1.4 mm; size 3 mm; wavelength 920 nm; wavelength control; wavelength-selective element; Continuous-wave (CW) lasers; distributed Bragg reflector (DBR) lasers; quantum dots (QDs); semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2008.2010874

Filename

4907157